nLIGHT | High-Power Semiconductor Lasers and Fibers - Single Emitter Diode Laser Devices (nv)

High-Power Solid-State Lasers

Products > Diodes > Single Emitter Diode Laser Devices

SINGLE EMITTER DIODE LASER DEVICES (NON VISIBLE)

Leveraging nXLT™ technology, nLIGHT’s non visible single emitter diode laser devices span the wavelength region from 808 to 2000 nm. With emitting apertures from 100 to 200 µm, and power levels up to 5 W, these devices offer a rare combination of high brightness and high reliability, enabling new applications.

Our non visible single emitter diode laser devices are available in c-mount and high-heat load (HHL) packages, and we offer a variety of lensing options to meet the specific needs of your application.

		C-2.5-08xx	C-3.0-08xx	C-5.0-08xx
Optical
Center wavelength (Range)¹	nm	790 - 825	808	808
CW output power	W	2.5	3	5
Center wavelength tolerance	nm	± 3	± 3	± 3
Emitter size	μm	150	100	200
Spectral width (FWHM)	nm	< 3	< 3	< 3
Slope efficiency	W / A	> 1.1	> 1.1	> 1.1
Polarization	TM or TE	TM	TM	TM
Fast-axis divergence	Degrees	36°	36°	36°
Slow-axis divergence	Degrees	10°	10°	10°
Wavelength temperature coefficient	nm / °C	0.28	0.28	0.28
Electrical
Power conversion efficiency	%	54	55	54
Threshold current (I_TH)	mA	450	400	650
Operating current (I_OP)	mA	2500	2800	4800
Operating voltage (V_OP)	V	1.85	1.85	1.9
Series resistance (R_S)	Ω	0.12	0.12	0.12
Mechanical
Lead soldering temperature (C-mount)	°C	250 (< 5 sec)	250 (< 5 sec)	250 (< 5 sec)
Lead soldering temperature (HHL)	°C	250 (< 5 sec)	250 (< 5 sec)	250 (< 5 sec)
Thermal
Thermal resistance³	°C / W	10	10	10
Operating temperature range (C-mount)²	°C	-20 to +30	-20 to +30	-20 to +30
Operating temperature range (HHL)²	°C	-20 to +50	-20 to +50	-20 to +50
Storage temperature range	°C	-20 to +80	-20 to +80	-20 to +80
Thermoelectric cooler (HHL only)
Drive current (Typical)	A	1.6	1.6	3.5
Drive voltage (Typical)	V	3.0	3.0	5.5
Thermistor resistance (25 °C)	kΩ	10	10	10
Monitor photodiode (HHL only)
Sensitivity	MA/mW	1 to 10	1 to 10	1 to 10
Capacitance	pF	6	6	6
Breakdown voltage	V	25	25	25
Operating voltage	V	10	10	10

		C-1.5-14xx	C-1.0-15xx
Optical
Center wavelength (Range)¹	nm	1400 - 1500	1500 - 1600
CW output power	W	1.5	1
Center wavelength tolerance	nm	± 5	± 5
Emitter size	μm	100	100
Spectral width (FWHM)	nm	< 10	< 10
Slope efficiency	W / A	> 0.4	> 0.4
Polarization	TM or TE	TE	TE
Fast-axis divergence	Degrees	27°	27°
Slow-axis divergence	Degrees	10°	10°
Wavelength temperature coefficient	nm / °C	0.4	0.4
Cavity length	mm	-	1
Electrical
Total conversion efficiency	%	32	25
Threshold current (I_TH)	mA	450	700
Operating current (I_OP)	mA	3700	5000
Operating voltage (V_OP)	V	1.2	1.4
Series resistance (R_S)	Ω	0.15	0.12
Mechanical
Lead soldering temperature (C-mount)	°C	250 (< 5 sec)	250 (< 5 sec)
Lead soldering temperature (HHL)	°C	250 (< 5 sec)	250 (< 5 sec)
Thermal
Thermal resistance³	°C / W	10	10
Operating temperature range (C-mount)²	°C	-20 to +30	-20 to +30
Operating temperature range (HHL)²	°C	-20 to +50	-20 to +30
Storage temperature range	°C	-20 to +80	-20 to +80
Thermoelectric cooler (HHL only)
Drive current	A	1.8 (Typical)	3.5 (Maximum)
Drive voltage	V	3.7 (Typical)	8 (Maximum)
Thermistor resistance (25 °C)	kΩ	10	10
Monitor photodiode (HHL only)
Sensitivity	µA/mW	1 to 10	1
Capacitance	pF	6	6
Breakdown voltage	V	25	25
Operating voltage	V	10	10

¹	xxx denotes wavelength.
²	The wavelength temperature coefficient is the wavelength shift per °C change at the diode junction.
³	A non-condensing environment is required for storage and operation below the ambient dew point.

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