7 Watt, 200 micron, 808 nm single emitter diode laser to be featured
at Photonics West booth #2033, January 24-26, 2006,
in San Jose, CA
Vancouver, WA January 24, 2006 – nLIGHT, the leading manufacturer of high-brightness, high-power semiconductor lasers, has released a near-infrared (NIR) diode laser that emits 7 W continuous wave (CW) power at 808 nm from a single, 200 micron broad area emitter utilizing its proprietary BrightLife™ semiconductor laser technology. Available in c-Mount or high heat load (HHL) package, this easy-to-integrate, high-brightness, 808 nm, multimode diode laser is an ideal pump source for solid-state lasers used for medical and industrial applications.
“We are continuously providing customers with products that feature high-power and high-brightness combined with long life operation and versatile package configurations,” said Joe DeBartolo, nLIGHT VP of Sales and Marketing. “Our 808 nm single emitter provides state-of-the-art brightness at the 808 nm wavelength and it can be configured on industry-standard c-Mounts and HHL packages as well as custom sub-mounts, making it an ideal device for a wide variety of applications.”
nLIGHT’s 808 nm single emitter diode laser is rated at 7 W, CW with an MTTF in excess of 80,000 hours at room temperature. The device has an operating current of 6.5 A and compliance voltage of 1.90 V. Beam divergence is <36 degrees by <10 degrees, FWHM. As an added feature, nLIGHT can collimate the fast-axis to <1 degree, FWHM.
All of nLIGHT’s high-power single emitter diode lasers are based on their BrightLife™ semiconductor laser technology resulting in high power, highly reliable long lifetime products.
nLIGHT does not and will not offer for sale any products within the geographical area served by The United States District Court for the Eastern District of Texas or to its residents.