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HIGH-POWER SEMICONDUCTOR LASERS AND FIBERS |
Industry leading performance from 1.4 to 2.1 microns Vancouver, WA May 02, 2008 – nLIGHT has extended the performance of its high-power long wavelength semiconductor laser diodes ranging from 1.4 to 2.1 microns. Industry-leading power and efficiency over this wavelength range enables medical, defense, and material processing applications. At 1.9 microns, the Pearl™ fiber-coupled module provides up to 20 Watts output power from a single 400 micron 0.22 NA fiber with >10% wall-plug efficiency. Single emitter chips produce up to 1.5 Watts rated power on expansion matched substrates. At 1.4 and 1.5 microns, the Pearl™ module produces up to 40 Watts from a single 400 micron 0.22 NA fiber and >30% wall-plug efficiency. Single emitter chips produce up to 3 Watts rated power on expansion matched substrates. |
RELATED PRODUCTS
Pearl™ 6xx nm Modules Pearl™ High-Brightness Modules Pearl™ High-Efficiency Modules Pearl™ High-Power Modules Single Emitter Diode Laser Devices (non visible) Single Emitter Diode Laser Devices (visible) |